1110.5205 (Gennady I. Zebrev et al.)

Using Capacitance Methods for Interface Trap Level Density Extraction in
Graphene Field-Effect Devices    [PDF]

Gennady I. Zebrev, Evgeny V. Melnik, Daria K. Batmanova

Methods of extraction of interface trap level density in graphene
field-effect devices from the capacitance-voltage measurements are described
and discussed. Interrelation with the graphene Fermi velocity extraction is
shown. Similarities and differences in interface trap extraction procedure in
graphene and silicon field-effect structures are briefly discussed.

View original: http://arxiv.org/abs/1110.5205