Friday, February 3, 2012

1202.0053 (Youngseok Kim et al.)

Interlayer Transport in Disordered Semiconductor Electron Bilayers    [PDF]

Youngseok Kim, Brian Dellabetta, Matthew J. Gilbert
We study the effects of disorder on the interlayer transport properties of
disordered semiconductor bilayers outside of the quantum Hall regime by
performing self-consistent quantum transport calculations. We find that the
addition of material disorder to the system affects interlayer interactions
leading to significant deviations in the interlayer transfer characteristics.
In particular, we find that disorder decreases and broadens the tunneling peak,
effectively reducing the interacting system to the non-interacting system, when
the mean-free path for the electrons becomes shorter than the system length.
Our results suggest that the experimental observation of exchange-enhanced
interlayer transport in semiconductor bilayers requires materials with
mean-free paths larger than the spatial extent of the system.
View original: http://arxiv.org/abs/1202.0053

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