1110.6319 (Gennady I. Zebrev et al.)

Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect
Transistor Operation Including Description of Two Saturation Modes    [PDF]

Gennady I. Zebrev, Alexander A. Tselykovskiy, Valentin O. Turin

Based on diffusion-drift approximation a version of analytic compact model
for large-area double-gate graphene field-effect transistor is presented. As
parts of the model, the electrostatics of double-gate structure is described
and a unified phenomenological approach for modeling of the two drain current
saturation modes is proposed.

View original: http://arxiv.org/abs/1110.6319