## Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire    [PDF]

Yuri M. Brovman, Joshua P. Small, Yongjie Hu, Ying Fang, Charles M. Lieber, Philip Kim
We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperature, peak TEP value of $\sim 300 \mu$V/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values are used to estimate the carrier doping of Si nanowires.
View original: http://arxiv.org/abs/1307.0249